High-performance poly-Si TFTs with Pr2O3 gate dielectric

被引：37

作者：

Chang, Chia-Wen ^{[1
]}

Deng, Chih-Kang ^{[1
]}

Huang, Jiun-Jia ^{[1
]}

Chang, Hong-Ren ^{[1
]}

Lei, Tan-Fu ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

high-kappa gate dielectric; praseodymium oxide (Pr2O3); thin-film transistors (TFTs);

D O I：

10.1109/LED.2007.911614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a polycrystalline silicon thin-film transistor (poly-Si TFT) with high-quality praseodymium oxide (Pr2O3) gate dielectric is proposed. Compared to TFTs with tetraethoxysilane gate dielectric, the electrical characteristics of poly-Si TFTs with Pr2O3 gate dielectric can be significantly improved, such as lower threshold voltage, lower subthreshold swing, triple ON/OFF current ratio, and a field-effect mobility that is about twice higher, even without any hydrogenation treatment. These improvements can be attributed to the high gate capacitance density by using a high-kappa gate dielectric. Therefore, the poly-Si TFT with Pr2O3 high-kappa gate dielectric is a promising candidate for high-speed and low-power display driving circuit applications in flat-panel displays.

引用

页码：96 / 98

页数：3

共 20 条

[1] High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric [J].

Hung, BF ;

Chiang, KC ;

Huang, CC ;

Chin, A ;

McAlister, SP .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) :384-386

[2] High-performance polycrystalline SiGe thin-film transistors using Al2O3 gate insulators [J].

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) :502-504

[3] Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon [J].

Lee, BH ;

Jeon, Y ;

Zawadzki, K ;

Qi, WJ ;

Lee, J .

APPLIED PHYSICS LETTERS, 1999, 74 (21) :3143-3145

[4] High-performance poly-silicon TFTs using HfO2 gate dielectric [J].

Lin, Chia-Pin ;

Tsui, Bing-Yue ;

Yang, Ming-Jui ;

Huang, Ruei-Hao ;

Chien, Chao-Hsin .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :360-363

[5] Investigation of the TiN gate electrode with tunable work function and its application for FinFET fabrication [J].

Liu, Yongxun ;

Kijima, Shinya ;

Sugimata, Etsuro ;

Masahara, Meishoku ;

Endo, Kazuhiko ;

Matsukawa, Takashi ;

Ishii, Kenichi ;

Sakamoto, Kunihiro ;

Sekigawa, Toshihiro ;

Yamauchi, Hiromi ;

Takanashi, Yoshifumi ;

Suzuki, Eiichi .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (06) :723-730

[6] A CMOS process-compatible wet-etching recipe for the high-k gate dielectrics Pr2O3 and Pr2-xTixO3 [J].

Mane, AU ;

Wenger, C ;

Schroeder, T ;

Zaumseil, P ;

Lippert, G ;

Weidner, G ;

Müssig, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (06) :C399-C402

[7]

Mussig HJ, 2001, 2001 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, P1, DOI 10.1109/IRWS.2001.993908

[8] Comparison of effects between large-area-beam ELA and SPC on TFT characteristics [J].

Noguchi, T ;

Tang, AJ ;

Tsai, JA ;

Reif, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1454-1458

[9] PRASEODYMIUM 3D-CORE AND 4D-CORE PHOTOEMISSION SPECTRA OF PR2O3 [J].

OGASAWARA, H ;

KOTANI, A ;

POTZE, R ;

SAWATZKY, GA ;

THOLE, BT .

PHYSICAL REVIEW B, 1991, 44 (11) :5465-5469

[10]

Ohshima H., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P157, DOI 10.1109/IEDM.1989.74250

← 1 2 →