Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors

被引：38

作者：

Phillips, J ^{[1
]}

Kamath, K ^{[1
]}

Brock, T ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 26期

关键词：

D O I：

10.1063/1.121643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the de characteristics of InGaAs/AlGaAs modulation doped field effect transistors in which a layer of self-organized InAs quantum dots is inserted adjacent to the pseudomorphic quantum well channel. Distinct steps and a negative differential resistance are observed in the current-voltage characteristics at room temperature and lower temperatures. These are attributed to conduction through the bound states in the quantum dots. (C) 1998 American Institute of Physics.

引用

页码：3509 / 3511

页数：3

共 24 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, P ;

SINGH, J ;

BAJAJ, KK .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686

[3] InGaAs-GaAs quantum-dot lasers [J].

Bimberg, D ;

Kirstaedter, N ;

Ledentsov, NN ;

Alferov, ZI ;

Kopev, PS ;

Ustinov, VM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :196-205

[4] InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties [J].

Bimberg, D ;

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, OG ;

Mao, MH ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Gosele, U ;

Heydenreich, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B) :1311-1319

[5] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[6]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[7] Electron transport properties through InAs self-assembled quantum dots in modulation doped structures [J].

Horiguchi, N ;

Futatsugi, T ;

Nakata, Y ;

Yokoyama, N .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2294-2296

[8] Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study [J].

Jiang, HT ;

Singh, J .

PHYSICAL REVIEW B, 1997, 56 (08) :4696-4701

[9] Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].

Kamath, K ;

Bhattacharya, P ;

Sosnowski, T ;

Norris, T ;

Phillips, J .

ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375

[10] Room temperature luminescence from self-organized InxCa1-xAs/GaAs (0.35<x<0.45) quantum dots with high size uniformity [J].

Kamath, K ;

Bhattacharya, P ;

Phillips, J .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :720-724

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