Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics

被引：23

作者：

Choi, R ^{[1
]}

Onishi, K ^{[1
]}

Kang, CS ^{[1
]}

Cho, HJ ^{[1
]}

Kim, YH ^{[1
]}

Krishnan, S ^{[1
]}

Akbar, MS ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 03期

关键词：

deuterium; forming gas; HfO2; interface quality; MOSFET; reliability;

D O I：

10.1109/LED.2003.809531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of high-temperature (600degreesC) anneal: in a dilute deuterium (N-2:D-2=96:4) atmosphere was first investigated and evaluated in comparison to high-temperature forming gas (N-2:H-2=96:4) anneal (600degreesC) and nonanneal samples. The high-temperature deuterium anneal was as effective as the forming gas anneal in improving MOSCAP and MOSFET characteristics such as the C-V curve, drain current, subthreshold swing, and carrier mobility. These can be attributed to the improved interface quality by D-2 atoms. However, unlike the forming gas anneal. the deuterium anneal provided the hafnium oxied (HfO2) gate dielectric MOSFET with better reliability characteristics such as threshold voltage (V-T) stability under high voltage stress.

引用

页码：144 / 146

页数：3

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