High electric field transport in modulation-doped InAs self-assembled quantum dots for high-frequency applications

被引：1

作者：

Park, HS ^{[1
]}

Mokerov, VG ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 03期

关键词：

D O I：

10.1063/1.1378799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modulation-doped N-AlGaAs (GaAs/InAs/GaAs/InAs)/GaAs-heterostructures with InAs-quantum dots (QDs) have been grown and investigated. Using these structures, modulation-doped field-effect transistors (MODFETs) have been fabricated and analyzed. It has been observed that they have the anomalous two-step shape in the current-voltage curve in contrast to the conventional curve with saturation. The saturation current I-dss for the second step practically does not depend on the gate bias U-G, showing that the concentration of electrons participating in the current flow becomes independent of U-G. It has been demonstrated that the QD-MODFETs present a promising type of the hot electron devices for high frequency applications. (C) 2001 American Institute of Physics.

引用

页码：418 / 420

页数：3

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