Structural and electrical properties of hydrogen-doped In2O3 films fabricated by solid-phase crystallization

被引：42

作者：

Koida, T. ^{[1
]}

Fujiwara, H. ^{[1
]}

Kondo, M. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2008年 / 354卷 / 19-25期

关键词：

ceramics; crystal growth; X-ray diffraction; conductivity; sputtering; indium tin oxide and other transparent conductors;

D O I：

10.1016/j.jnoncrysol.2007.09.076

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated structural and electrical properties of hydrogen (H)-doped In2O3 films fabricated by crystallization of the amorphous phase. To fabricate H-doped amorphous films, H2O vapor has been introduced into a sputtering system during the deposition of In2O3 without substrate heating. The films fabricated by solid-phase crystallization at 200 C have larger grains and lower strain than films fabricated by vapor-phase crystal growth. The resulting H-doped In2O3 films show very large mobility of 130 cm(2)/V s with resistivity of 2.7 x 10(-4) Omega cm. The high mobility in the films is ascribable to suppression of grain boundary defects as well as multicharged and neutral impurities. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2805 / 2808

页数：4

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