Sensitivity analyses of the thermophysical properties of silicon melt and crystal

被引:17
作者
Mito, M
Tsukada, T
Hozawa, M
Yokoyama, C
Li, YR
Imaishi, N
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Chongqing Univ, Coll Power Engn, Chongqing 400044, Peoples R China
[3] Kyushu Univ, Inst Mat Chem & Engn, Kasuga, Fukuoka 8168580, Japan
关键词
sensitivity analysis; thermophysical properties; silicon; global analysis; CZ furnace; finite element method;
D O I
10.1088/0957-0233/16/2/018
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A set of global numerical simulations based on a simple, laminar, axisymmetric and pseudo steady model of a small silicon CZ furnace was conducted to reveal the influences of the thermophysical properties of the melt and crystal on the non-dimensional crystal pulling rate, i.e., the Peclet number Pe, and the deflection of the melt/crystal interface Deltaz, for the sensitivity analyses of the properties. The properties investigated here are the temperature coefficient of surface tension, viscosity, thermal conductivity, the thermal expansion coefficient and emissivity of the melt, and the thermal conductivity and emissivity of the crystal. The results demonstrated that, concerning the thermophysical properties of the melt, emissivity is relatively sensitive to Pe and Deltaz. Concerning the crystal properties. thermal conductivity is more sensitive to Pe, while emissivity is more sensitive to Deltaz.
引用
收藏
页码:457 / 466
页数:10
相关论文
共 54 条
[1]   Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection [J].
Assaker, R ;
VandenBogaert, N ;
Dupret, F .
JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) :450-460
[2]  
BAUS B, 2000, J CRYST GROWTH, V219, P123
[3]   Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results [J].
Dornberger, E ;
Tomzig, E ;
Seidl, A ;
Schmitt, S ;
Leister, HJ ;
Schmitt, C ;
Muller, G .
JOURNAL OF CRYSTAL GROWTH, 1997, 180 (3-4) :461-467
[4]   Comparison of measurements and numerical simulations of melt convection in Czochralski crystal growth of silicon [J].
Enger, S ;
Gräbner, O ;
Müller, G ;
Breuer, M ;
Durst, F .
JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) :135-142
[5]   Numerical study of 3D unsteady melt convection during indu strial-scale CZ Si-crystal growth [J].
Evstratov, IY ;
Kalaev, VV ;
Zhmakin, AI ;
Makarov, YN ;
Abramov, AG ;
Ivanov, NG ;
Korsakov, AB ;
Smirnov, EM ;
Dornberger, E ;
Virbulis, J ;
Tomzig, E ;
von Ammon, W .
JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 III) :1757-1761
[6]   Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals [J].
Evstratov, IY ;
Kalaev, VV ;
Zhmakin, AI ;
Makarov, YN ;
Abramov, AG ;
Ivanov, NG ;
Smirnov, EM ;
Dornberger, E ;
Virbulis, J ;
Tomzig, E ;
von Ammon, W .
JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) :22-29
[7]   Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface [J].
Evstratov, IY ;
Kalaev, VV ;
Nabokov, VN ;
Zhmakin, AI ;
Makarov, YN ;
Abramov, AG ;
Ivanov, NG ;
Rudinsky, EA ;
Smirnov, EM ;
Lowry, SA ;
Dornberger, E ;
Virbulis, J ;
Tomzig, E ;
Von Ammon, W .
MICROELECTRONIC ENGINEERING, 2001, 56 (1-2) :139-142
[8]   Analysis of surface oscillation of droplet under microgravity for the determination of its surface tension [J].
Fujii, H ;
Matsumoto, T ;
Nogi, K .
ACTA MATERIALIA, 2000, 48 (11) :2933-2939
[9]   Surface tension of molten silicon measured by the electromagnetic levitation method under microgravity [J].
Fujii, H ;
Matsumoto, T ;
Hata, N ;
Nakano, T ;
Kohno, M ;
Nogi, K .
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2000, 31 (06) :1585-1589
[10]   Crystal growth melt flow control by means of magnetic fields [J].
Galindo, V ;
Gerbeth, G ;
von Ammon, W ;
Tomzig, E ;
Virbulis, J .
ENERGY CONVERSION AND MANAGEMENT, 2002, 43 (03) :309-316