Thermal transport across Twin Grain Boundaries in Polycrystalline Graphene from Nonequilibrium Molecular Dynamics Simulations

被引:335
作者
Bagri, Akbar [1 ]
Kim, Sang-Pil [1 ]
Ruoff, Rodney S. [2 ,3 ]
Shenoy, Vivek B. [1 ]
机构
[1] Brown Univ, Sch Engn, Providence, RI 02912 USA
[2] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA
[3] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
Thermal conductivity; polycrystalline graphene; phonon transport; Kapitza conductance; ELECTRONIC TRANSPORT; RESISTANCE; FILMS; CONDUCTIVITY; ROUTE; GAS;
D O I
10.1021/nl202118d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have studied the thermal conductance of tilt grain boundaries in graphene using nonequilibrium molecular dynamics simulations. When a constant heat flux is allowed to flow, we observe sharp jumps in temperature at the boundaries, characteristic of interfaces between materials of differing thermal properties. On the basis of the magnitude of these jumps, we have computed the boundary conductance of twin grain boundaries as a function of their misorientation angles. We find the boundary conductance to be in the range 1.5 x 10(10) to 4.5 x 10(10) W/(m(2) K), which is significantly higher than that of any other thermoelectric interfaces reported in the literature. Using the computed values of boundary conductances, we have identified a critical grain size of 0.1 mu m below which the contribution of the tilt boundaries to the conductivity becomes comparable to that of the contribution from the grains themselves. Experiments to test the predictions of our simulations are proposed.
引用
收藏
页码:3917 / 3921
页数:5
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