Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs

被引：12

作者：

Lee, JW ^{[1
]}

MacKenzie, KD

Johnson, D

Shul, RJ

Pearton, SJ

Abernathy, CR

Ren, F

机构：

[1] Plasma Therm Inc, St Petersburg, FL 33716 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 06期

基金：

美国能源部;

关键词：

D O I：

10.1016/S0038-1101(98)00117-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs/AlGaAs heterojunction bipolar transistors were coated with thin (< 200 Angstrom) SiNx or SiO2 layers using electron cyclotron resonance chemical vapor deposition.The process variables were deposition temperature (25-120 degrees C), source power (150-700 W), SiH4 percentage (20-50%), process pressure (15-40 mTorr) and additional Ar flow rate (0-20 sccm). HBT de parameters were least degraded at high SiH4 percentages in all the plasma chemistries investigated (SiH4/NH3, SiH4/N-2, SiH4/N2O), at moderate source powers (200-500 W), at pressures around 15 mTorr, and at zero Ar flow rates. Deposition temperature had a significant effect only for the SiH4/NH3 chemistry, where hydrogen passivation was more efficient at temperatures above 100 degrees C. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1021 / 1025

页数：5

共 34 条

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