Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography

被引:100
作者
Savas, TA [1 ]
Farhoud, M
Smith, HI
Hwang, M
Ross, CA
机构
[1] MIT, Dept Phys, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
关键词
D O I
10.1063/1.370029
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method is presented for the fabrication of large-area arrays of magnetic particles with 100 nm period, using achromatic interferometric lithography combined with etching, electrodeposition, or an evaporation and liftoff processes. These "nanomagnet'' arrays have applications in patterned magnetic media, in magnetic memories, and for studies of particle interactions. (C) 1999 American Institute of Physics. [S0021-8979(99)69208-8].
引用
收藏
页码:6160 / 6162
页数:3
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