Magnetically excited plasma oxidation of GaAs

被引：16

作者：

Nakamura, R

Ikoma, H

机构：

[1] Science Univ of Tokyo, Chiba, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 1A期

关键词：

gallium arsenide; oxidation; magnetically excited plasma; helicon wave; C-V characteristics; X-ray photoelectron spectroscopy;

D O I：

10.1143/JJAP.35.L8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Relatively good-quality oxide of GaAs was grown using magnetically excited oxygen plasma (helicon wave) with substrate heating (300 degrees C) or a mixture of Ar gas in oxygen. Post-thermal annealing at 400 degrees C in oxygen substantially improved the capacitance-voltage (C-V) characteristics, which showed very small frequency dispersion without hysteresis. However, no inversion behavior was observed. X-ray photoelectron spectroscopic measurements showed that As2O3 and Ga2O3 are the main component species of these oxides.

引用

收藏

页码：L8 / L11

页数：4

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