Room-temperature 1.54 μm electroluminescence from erbium-doped Si/SiGe waveguides

被引：14

作者：

Neufeld, E ^{[1
]}

Sticht, A ^{[1
]}

Luigart, A ^{[1
]}

Brunner, K ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 21期

关键词：

D O I：

10.1063/1.122672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we demonstrate room-temperature electroluminescence from erbium ions in SiGe waveguide structures. Molecular beam epitaxy was employed to deposit SiGe layers doped with erbium and oxygen on (100)Si. Samples were processed as mesa waveguides and contacted to allow electrical pumping of the erbium ions. The luminescence was collected from the waveguides by a confocal microscope revealing emission from the end facet with a narrow spatial distribution. (C) 1998 American Institute of Physics. [S0003-6951(98)02242-6].

引用

页码：3061 / 3063

页数：3

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