Improved annealing process for electroless Pd plating induced crystallization of amorphous silicon

被引：1

作者：

Hu, GR ^{[1
]}

Huang, TJ ^{[1
]}

Wu, YS ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 8A期

关键词：

thin-film transistor; amorphous silicon; polycrystalline silicon; metal-induced crystallization; electroless plating and physical vapor deposition;

D O I：

10.1143/JJAP.42.L895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroless Pd plating induced crystallization of amorphous silicon (a-Si) thin films has been proposed for fabricating low-temperature polycrystalline silicon thin film transistors (LTPS TFTs). However, the current crystallization process often leads to poor device performance due to the large amount of I'd-silicide residues in the poly-Si thin films. It was found that the amount of I'd silicide increased with annealing time and temperature. In this study, a two-step annealing process was developed to obtain the appropriate amount of Pd silicide for inducing the crystallization of a-Si. The device characteristics were significantly improved by this two-step process.

引用

页码：L895 / L897

页数：3

共 10 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].

AOYAMA, T ;

KAWACHI, G ;

KONISHI, N ;

SUZUKI, T ;

OKAJIMA, Y ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1169-1173

[2] Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films [J].

Chao, CW ;

Hu, GR ;

Wu, YS ;

Chen, YC ;

Feng, MS .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (02) :C31-C32

[3] AL-DOPED AND SB-DOPED POLYCRYSTALLINE SILICON OBTAINED BY MEANS OF METAL-INDUCED CRYSTALLIZATION [J].

GONG, SF ;

HENTZELL, HTG ;

ROBERTSSON, AE ;

HULTMAN, L ;

HORNSTROM, SE ;

RADNOCZI, G .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3726-3732

[4] NEEDLE-LIKE CRYSTALLIZATION OF NI DOPED AMORPHOUS-SILICON THIN-FILMS [J].

HEMPEL, T ;

SCHOENFELD, O ;

SYROWATKA, F .

SOLID STATE COMMUNICATIONS, 1993, 85 (11) :921-924

[5] Electroless plating with Pd induced crystallization of amorphous silicon thin films [J].

Hu, GR ;

Wu, YCS ;

Chao, CW ;

Huang, TJ .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11A) :6356-6357

[6] Nickel induced crystallization of amorphous silicon thin films [J].

Jin, ZH ;

Bhat, GA ;

Yeung, M ;

Kwok, HS ;

Wong, M .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :194-200

[7] Fabrication of high-mobility p-channel poly-Si thin film transistors by self-aligned metal-induced lateral crystallization [J].

Lee, SW ;

Ihn, TH ;

Joo, SK .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (08) :407-409

[8] Pd2Si-assisted crystallization of amorphous silicon thin films at low temperature [J].

Lee, SW ;

Lee, BI ;

Kim, TK ;

Joo, SK .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7180-7184

[9] PERIPHERAL CIRCUIT INTEGRATED POLY-SI TFT LCD WITH GRAY SCALE REPRESENTATION [J].

OHWADA, JI ;

TAKABATAKE, M ;

ONO, YA ;

MIMURA, A ;

ONO, K ;

KONISHI, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1923-1928

[10] LOW-TEMPERATURE FABRICATION OF HIGH-MOBILITY POLY-SI TFTS FOR LARGE-AREA LCDS [J].

SERIKAWA, T ;

SHIRAI, S ;

OKAMOTO, A ;

SUYAMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1929-1933

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