Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films

被引：3

作者：

Chao, CW ^{[1
]}

Hu, GR ^{[1
]}

Wu, YS ^{[1
]}

Chen, YC ^{[1
]}

Feng, MS ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 02期

关键词：

D O I：

10.1149/1.1435562

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall of the amorphous-silicon islands. After samples were annealed at 530degreesC, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of similar to55degrees from the edge. The direction of the primary grain growth was along [211] and the secondary growth occurred along [011] direction. (C) 2001 The Electrochemical Society.

引用

页码：C31 / C32

页数：2

共 11 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].

AOYAMA, T ;

KAWACHI, G ;

KONISHI, N ;

SUZUKI, T ;

OKAJIMA, Y ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1169-1173

[2] Effects of longitudinal grain boundaries on the performance of MILC-TFT's [J].

Bhat, GA ;

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :97-99

[3] A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films [J].

Cao, M ;

Talwar, S ;

Kramer, KJ ;

Sigmon, TW ;

Saraswat, KC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (04) :561-567

[4] AL-DOPED AND SB-DOPED POLYCRYSTALLINE SILICON OBTAINED BY MEANS OF METAL-INDUCED CRYSTALLIZATION [J].

GONG, SF ;

HENTZELL, HTG ;

ROBERTSSON, AE ;

HULTMAN, L ;

HORNSTROM, SE ;

RADNOCZI, G .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3726-3732

[5] Nickel induced crystallization of amorphous silicon thin films [J].

Jin, ZH ;

Bhat, GA ;

Yeung, M ;

Kwok, HS ;

Wong, M .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :194-200

[6] A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization [J].

Kwak, WK ;

Cho, BR ;

Yoon, SY ;

Park, SJ ;

Jang, J .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (03) :107-109

[7] Pd2Si-assisted crystallization of amorphous silicon thin films at low temperature [J].

Lee, SW ;

Lee, BI ;

Kim, TK ;

Joo, SK .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7180-7184

[8] PERIPHERAL CIRCUIT INTEGRATED POLY-SI TFT LCD WITH GRAY SCALE REPRESENTATION [J].

OHWADA, JI ;

TAKABATAKE, M ;

ONO, YA ;

MIMURA, A ;

ONO, K ;

KONISHI, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1923-1928

[9] Defects in solid phase and laser crystallised polysilicon thin film transistors [J].

Petinot, F ;

Plais, F ;

Mencaraglia, D ;

Legagneux, P ;

Reita, C ;

Huet, O ;

Pribat, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :1207-1212

[10] LOW-TEMPERATURE FABRICATION OF HIGH-MOBILITY POLY-SI TFTS FOR LARGE-AREA LCDS [J].

SERIKAWA, T ;

SHIRAI, S ;

OKAMOTO, A ;

SUYAMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1929-1933

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