Electroless plating with Pd induced crystallization of amorphous silicon thin films

被引：1

作者：

Hu, GR ^{[1
]}

Wu, YCS ^{[1
]}

Chao, CW ^{[1
]}

Huang, TJ ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 11A期

关键词：

electroless plating; metal-induced-crystallization; amorphous silicon; polycrystalline silicon; thin film transistor;

D O I：

10.1143/JJAP.41.6356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.

引用

页码：6356 / 6357

页数：2

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