SiC/Si heterostructure negative-differential-resistance diode for high-temperature applications

被引：12

作者：

Wu, KH ^{[1
]}

Fang, YK ^{[1
]}

Ho, JJ ^{[1
]}

Hsieh, WT ^{[1
]}

Chen, TJ ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, VLSI Technol Lab, Dept Elect Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 23期

关键词：

D O I：

10.1063/1.121526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the observation of N-shaped negative-differential-resistance (NDR) characteristics in a SiC/Si heterostructure diode. The typical NDR in this device has a peak-to-valley current ratio (PVCR) of 44 and a high peak current of 4.8 mA at room temperature. A possible model based on the multi-tunneling process was proposed to explain the origin of the NRD in this device. The most attractive feature of this device is its high-temperature NDR characteristics. An obvious NDR with a PVCR of as high as 9 is obtained at 200 degrees C, indicating that this SiC/Si heterostructure NDR diode is promising for high-temperature electronic applications. (C) 1998 American Institute of Physics.

引用

页码：3017 / 3019

页数：3

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