Electronic materials growth: A retrospective and look forward

被引：1

作者：

Tu, CW ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2003年 / 21卷 / 05期

关键词：

D O I：

10.1116/1.1599864

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This article reviews the development of electronic materials, primarily III-V compound semiconductors; from substrates to epitaxy and in situ monitoring to heterostructures, quantum wells. and superlattices, that are important to various device applications. As the current research direction leads to the immediate future, the article then summarizes some of the recent advancement in quantum wires, nanowires, and quantum dots. (C) 2003 American Vacuum Society.

引用

页码：S160 / S166

页数：7

共 60 条

[11] One-dimensional heterostructures in semiconductor nanowhiskers [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060

[12] Si-based materials and devices for light emission in silicon [J].

Castagna, ME ;

Coffa, S ;

Monaco, M ;

Caristia, L ;

Messina, A ;

Mangano, R ;

Bongiorno, C .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (3-4) :547-553

[13]

CAVE EF, 1963, RCA REV, V24, P523

[14] INSITU DETECTION OF RELAXATION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES USING LASER-LIGHT SCATTERING [J].

CELII, FG ;

BEAM, EA ;

FILESSESLER, LA ;

LIU, HY ;

KAO, YC .

APPLIED PHYSICS LETTERS, 1993, 62 (21) :2705-2707

[15] GROWTH OF GAXIN1-XP/GA0.5IN0.5P MULTIPLE-QUANTUM WIRES BY STRAIN-INDUCED LATERAL LAYER ORDERING PROCESS [J].

CHEN, AC ;

MOY, AM ;

PEARAH, PJ ;

HSIEH, KC ;

CHENG, KY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :830-832

[16] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284

[17] REAL-TIME MONITORING OF HOMOEPITAXIAL AND HETEROEPITAXIAL PROCESSES BY P-POLARIZED REFLECTANCE SPECTROSCOPY [J].

DIETZ, N ;

MILLER, A ;

BACHMANN, KJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (01) :153-155

[18] DOPING SUPER-LATTICES [J].

DOHLER, GH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03) :851-856

[19] SEMI-INSULATING GAAS SUBSTRATES FOR INTEGRATED-CIRCUIT DEVICES - PROMISES AND PROBLEMS [J].

EASTMAN, LF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :2050-2053

[20] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

← 1 2 3 4 5 6 →