Development behaviours and microstructure quality of downward-development in deep x-ray lithography

被引:14
作者
Cheng, CM [1 ]
Chen, RH [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu, Taiwan
关键词
D O I
10.1088/0960-1317/11/6/310
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a novel development method for fabricating high aspect ratio microstructures in deep x-ray lithography. In this method, microstructures are developed downward to utilize the difference of the specific weight between the development products and the developer to efficiently remove the development products. The development behaviours of the proposed method (downward-development) are investigated and compared with the conventional method (upward-development). Experimental results indicate that the developing rate of downward-development is approximately twice that obtained by upward-development. Additionally, the development products are easily removed and a satisfactory microstructure quality is achieved via this process. The proposed method also yields accurate predictability to estimate the necessary developing time. Moreover, the elevated temperature increases the developing rate of downward-development more sensitively than for upward-development.
引用
收藏
页码:692 / 696
页数:5
相关论文
共 13 条
[1]  
Becker E. W., 1986, Microelectronic Engineering, V4, P35, DOI 10.1016/0167-9317(86)90004-3
[2]   Dose distribution of synchrotron x-ray penetrating materials of low atomic numbers [J].
Cheng, Y ;
Kuo, NY ;
Su, CH .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (05) :2163-2166
[3]   DEEP X-RAY-LITHOGRAPHY FOR THE PRODUCTION OF 3-DIMENSIONAL MICROSTRUCTURES FROM METALS, POLYMERS AND CERAMICS [J].
EHRFELD, W ;
LEHR, H .
RADIATION PHYSICS AND CHEMISTRY, 1995, 45 (03) :349-365
[4]   ULTRASONIC SUPPORTED DEVELOPMENT OF IRRADIATED MICROSTRUCTURES [J].
ELKHOLI, A ;
MOHR, J ;
STRANSKY, R .
MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) :219-222
[5]   DEVELOPER CHARACTERISTICS OF POLY-(METHYL METHACRYLATE) ELECTRON RESIST [J].
GREENEICH, JS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) :970-976
[6]   Adhesion promotion between poly(methylmethacrylate) and metallic surfaces for LiGA evaluated by shear stress measurements [J].
Malek, CGK ;
Das, SS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3543-3546
[7]  
Pan CT, 1999, SENSOR MATER, V11, P339
[8]   Influence of developer temperature and resist material on the structure quality in deep x-ray lithography [J].
Pantenburg, FJ ;
Achenbach, S ;
Mohr, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3547-3551
[9]   Characterisation of defects in very high deep-etch X-ray lithography microstructures [J].
Pantenburg, FJ ;
Achenbach, S ;
Mohr, J .
MICROSYSTEM TECHNOLOGIES, 1998, 4 (02) :89-93
[10]   Structural changes in poly(methyl methacrylate) during deep-etch X-ray synchrotron radiation lithography .2. Radiation effects on PMMA [J].
Schmalz, O ;
Hess, M ;
Kosfeld, R .
ANGEWANDTE MAKROMOLEKULARE CHEMIE, 1996, 239 :79-91