Noise and photoconductive gain in InAs quantum-dot infrared photodetectors

被引：83

作者：

Ye, ZM

Campbell, JC

Chen, ZH

Kim, ET

Madhukar, A

机构：

[1] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA

[2] Univ So Calif, Dept Mat Sci & Phys, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 06期

关键词：

D O I：

10.1063/1.1597987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report noise characteristics, carrier capture probability, and photoconductive gain of InAs quantum-dot infrared photodetectors with unintentionally doped active regions. At 77 K, a photoconductive gain of 750 was observed at a bias of 0.7 V. The high gain is a result of the low carrier capture probability: p=0.0012. (C) 2003 American Institute of Physics.

引用

收藏

页码：1234 / 1236

页数：3

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