Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot

被引：64

作者：

Chiou, YL ^{[1
]}

Gambino, JP

Mohammad, M

机构：

[1] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA

[2] IBM Microelect, Essex Jct, VT 05452 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 10期

关键词：

MOS capacitors; thin gate oxides; Fowler-Nordheim tunneling;

D O I：

10.1016/S0038-1101(01)00190-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wide range of values have been reported for the Fowler-Nordheim (F-N) parameters A and B for the tunneling emission in MOS capacitor structures. The parameters A and B are respectively the pre-exponential factor and the exponent in the F-N equation. In this study, it is shown that the oxide thickness is the most influential factor in determining the accuracy of the parameter B. The uncertainty of the oxide thickness may be responsible for the discrepancies in the reported values for B. The discrepancy in the value of A was attributed to the difference in the measurement conditions and gate oxide processing. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1787 / 1791

页数：5

共 15 条

[1] ELECTRON-TUNNELING AT AL-SIO2 INTERFACES [J].