High-k/Ge MOSFETs for future nanoelectronics

被引:443
作者
Kamata, Yoshiki [1 ]
机构
[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
关键词
D O I
10.1016/S1369-7021(07)70350-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently developed high-permittttivity [k] materials have reopened the door to Ge as a channel material in metal-oxide-semiconductor field-effect transistors [MOSFETs]. High-k/Ge gate stacks are very promising for future nanscale devices. This article reviews the opportunities and challenges of high-k/Ge MOSFET technology. The most important technical issue is the passivation of the Ge surface. Physical phenomena and electrical characteristics that depend on the high-k/Ge interface are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
引用
收藏
页码:30 / 38
页数:9
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