TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

被引：13

作者：

Xie, Qi ^{[1
]}

Musschoot, Jan ^{[1
]}

Schaekers, Marc ^{[2
]}

Caymax, Matty ^{[2
]}

Delabie, Annelies ^{[2
]}

Lin, Dennis ^{[2
]}

Qu, Xin-Ping ^{[3
]}

Jiang, Yu-Long ^{[3
]}

Van den Berghe, Sven ^{[4
]}

Detavernier, Christophe ^{[1
]}

机构：

[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[4] CEN SCK, B-2400 Mol, Belgium

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

ELECTRICAL-PROPERTIES; FILMS;

D O I：

10.1149/1.3559770

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Material and electrical properties of TiO2/HfO2 bi-layer gate stacks were investigated for germanium (Ge) based metal-oxide-semiconductor devices. In situ NH3 plasma treatment was employed to passivate the Ge surface and promising performance including low capacitance-voltage hysteresis and interface trap density was achieved. It shows a superior dielectric breakdown voltage (4.2-3.4 V) for the TiO2/HfO2 bi-layer stacks than HfO2 single layer stack at a similar capacitance equivalent thickness (CET) of 1.6 nm. A minimum CET of 1.4 nm was obtained for capacitors on both p and n-type Ge (100) with a gate leakage current density < 4 x 10(-7) A/cm(2) at V-FB +/- 1 V. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3559770] All rights reserved.

引用

页码：G27 / G30

页数：4

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