Effective masses of wurtzite GaN calculated from an empirical tight binding model

被引:17
作者
Jogai, B [1 ]
机构
[1] Wright State Univ, Univ Res Ctr, Dayton, OH 45435 USA
关键词
semiconductors; thin films; electronic band structure; spin-orbit effects;
D O I
10.1016/S0038-1098(98)00220-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The energy band structure of wurtzite GaN is calculated using an sp(3)d(5) - sp(3) empirical tight-binding method (ETBM) that includes the spin-orbit interaction. The model incorporates all nearest-neighbor and some second-nearest neighbor interactions within the two-center approximation. The second-nearest neighbor interactions excluded are the cation-cation interactions involving the Ga 3d orbital. The effective masses of the conduction and A, B, and C valence bands have been calculated and found to be in good agreement with published experimental data. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:345 / 348
页数:4
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