Room-temperature 2.81-μm continuous-wave operation of GaInAsSb-AlGaAsSb laser

被引：9

作者：

Grau, M ^{[1
]}

Lin, C ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 02期

关键词：

GaInAsSb; midinfrared lasers; quantum-well (QW) lasers; semiconductor lasers;

D O I：

10.1109/LPT.2003.823094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInAsSb-AlGaAsSb multiple quantum-well (QW) lasers with an emission wavelength of 2.81 mum are reported. The ridge waveguide lasers with highly strained QWs show continuous-wave laser emission up to 25 degreesC; in pulsed mode, the lasers operate up to 60 degreesC. For pulsed operation, a threshold current density of 360 A/cm(2) is found for devices with 30-mum stripe width and 2-mm cavity length at room temperature. A low threshold current density at infinite length of 248 A/cm(2) is derived.

引用

页码：383 / 385

页数：3

共 6 条

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