8.8W CW power from broad-waveguide Al-free active-region (λ = 805 nm) diode lasers

被引：34

作者：

Wade, JK

Mawst, LJ

Botez, D

Morris, JA

机构：

[1] Univ Wisconsin, Reed Ctr Photon, Madison, WI 53706 USA

[2] LDX Optron Inc, Maryville, TN 37801 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 11期

关键词：

D O I：

10.1049/el:19980775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-free active-region (lambda = 805 nm) diode lasers with 1 mu m thick InGaP waveguide layers provide continuous wave powers as high as 8.8W from 1.25mm long devices with 4%/95% facet-coating reflectivities and 100 mu m wide stripes. The transverse beam pattern is Gaussian-like with a 36 degrees beamwidth and the series resistance is only 48m Omega.

引用

页码：1100 / 1101

页数：2

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