Argon ion damage in self-assembled quantum dots structures

被引：35

作者：

Schoenfeld, WV ^{[1
]}

Chen, CH ^{[1
]}

Petroff, PM ^{[1
]}

Hu, EL ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect. (C) 1998 American Institute of Physics. [S0003-6951(98)03346-4].

引用

页码：2935 / 2937

页数：3

共 20 条

[11] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS
GRUNDMANN, M
CHRISTEN, J
LEDENTSOV, NN
BOHRER, J
BIMBERG, D
RUVIMOV, SS
WERNER, P
RICHTER, U
GOSELE, U
HEYDENREICH, J
USTINOV, VM
EGOROV, AY
ZHUKOV, AE
KOPEV, PS
ALFEROV, ZI
[J]. PHYSICAL REVIEW LETTERS, 1995, 74 (20) : 4043 - 4046
[12] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS
LANG, DV
KIMERLING, LC
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 489 - 492
[13] FOCUSED ION-BEAM CHANNELING EFFECTS AND ULTIMATE SIZES OF GAALAS/GAAS NANOSTRUCTURES
LARUELLE, F
BAGCHI, A
TSUCHIYA, M
MERZ, J
PETROFF, PM
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (16) : 1561 - 1563
[14] PHOTOREFLECTANCE STUDY ON THE BEHAVIOR OF PLASMA-INDUCED DEFECTS DEACTIVATING SI DONORS IN GAAS
NAKANISHI, H
WADA, K
WALUKIEWICZ, W
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) : 5103 - 5108
[15] Intraband absorption in n-doped InAs/GaAs quantum dots
Sauvage, S
Boucaud, P
Julien, FH
Gerard, JM
ThierryMieg, V
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2785 - 2787
[16] EVIDENCE FOR HEAVY-ION CHANNELING IN ALGAAS AT LOW ENERGIES
STOFFEL, NG
SCHWARZ, SA
PUDENZI, MAA
KASH, K
FLOREZ, LT
HARBISON, JP
WILKENS, BJ
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (13) : 1603 - 1605
[17] MOLECULAR-DYNAMICS SIMULATIONS OF DEEP PENETRATION BY CHANNELED IONS DURING LOW-ENERGY ION-BOMBARDMENT OF III-V SEMICONDUCTORS
STOFFEL, NG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 651 - 658
[18] VINETSKII VL, 1986, PHYSICS RAD EFFECTS
[19] LOW-TEMPERATURE ANNEALING OF ION-IMPLANTATION-INDUCED DEFECTS IN GAAS BY MINORITY-CARRIER INJECTION
WADA, K
NAKANISHI, H
YAMADA, K
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (18) : 2525 - 2527
[20] Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
Yusa, G
Sakaki, H
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (03) : 345 - 347

← 1 2 →