Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

被引:4503
作者
Shi, Dong [1 ]
Adinolfi, Valerio [2 ]
Comin, Riccardo [2 ]
Yuan, Mingjian [2 ]
Alarousu, Erkki [1 ]
Buin, Andrei [2 ]
Chen, Yin [1 ]
Hoogland, Sjoerd [2 ]
Rothenberger, Alexander [1 ]
Katsiev, Khabiboulakh [1 ]
Losovyj, Yaroslav [3 ]
Zhang, Xin [4 ]
Dowben, Peter A. [4 ]
Mohammed, Omar F. [1 ]
Sargent, Edward H. [2 ]
Bakr, Osman M. [1 ]
机构
[1] KAUST, SPERC, Thuwal 239556900, Saudi Arabia
[2] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[3] Indiana Univ, Dept Chem, Bloomington, IN 47405 USA
[4] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
基金
加拿大自然科学与工程研究理事会;
关键词
HALIDE PEROVSKITES; MINORITY-CARRIERS; SOLAR-CELLS; SILICON; TRANSISTORS;
D O I
10.1126/science.aaa2725
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The fundamental properties and ultimate performance limits of organolead trihalide MAPbX(3) (MA = CH3NH3+; X = Br- or I-) perovskites remain obscured by extensive disorder in polycrystalline MAPbX(3) films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX(3) single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics. We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX(3) single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.
引用
收藏
页码:519 / 522
页数:4
相关论文
共 20 条
[1]   CHARACTERIZATION OF TRAPPING STATES IN POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
AYRES, JR .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1787-1792
[2]   Deep-level impurities in CdTe/CdS thin-film solar cells [J].
Balcioglu, A ;
Ahrenkiel, RK ;
Hasoon, F .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7175-7178
[3]   Dislocation-related deep levels in carbon rich p-type polycrystalline silicon [J].
Capan, I. ;
Borjanovic, V. ;
Pivac, B. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2007, 91 (10) :931-937
[4]   Structure of Methylammonium Lead Iodide Within Mesoporous Titanium Dioxide: Active Material in High-Performance Perovskite Solar Cells [J].
Choi, Joshua J. ;
Yang, Xiaohao ;
Norman, Zachariah M. ;
Billinge, Simon J. L. ;
Owen, Jonathan S. .
NANO LETTERS, 2014, 14 (01) :127-133
[5]   High Open-Circuit Voltage Solar Cells Based on Organic-Inorganic Lead Bromide Perovskite [J].
Edri, Eran ;
Kirmayer, Saar ;
Cahen, David ;
Hodes, Gary .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2013, 4 (06) :897-902
[6]   Organic-inorganic halide perovskites: an ambipolar class of materials with enhanced photovoltaic performances [J].
Giorgi, Giacomo ;
Yamashita, Koichi .
JOURNAL OF MATERIALS CHEMISTRY A, 2015, 3 (17) :8981-8991
[7]   Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density [J].
Goldmann, C ;
Krellner, C ;
Pernstich, KP ;
Haas, S ;
Gundlach, DJ ;
Batlogg, B .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)
[8]   TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J].
HAYNES, JR ;
HORNBECK, JA .
PHYSICAL REVIEW, 1955, 100 (02) :606-615
[9]   THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].
HAYNES, JR ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (05) :835-843
[10]   TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].
HORNBECK, JA ;
HAYNES, JR .
PHYSICAL REVIEW, 1955, 97 (02) :311-321