Modelling the ultraviolet irradiation effect on the effective minority carrier recombination lifetime of silicon wafers

被引：5

作者：

Lee, WP ^{[1
]}

Khong, YL ^{[1
]}

Seow, WS ^{[1
]}

机构：

[1] ShinEtsu Handotai M Sdn Bhd, Dept Res & Dev, Kuala Lumpur 54007, Malaysia

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.369220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A mathematical model is presented to explain the effect of ultraviolet (UV) irradiation on the minority carrier recombination lifetime (LT) and surface barrier observed in thermally oxidized, RCA cleaned, and contaminated silicon wafers. The proposed model assumes that UV photons (4.9 eV) modify the density of two interface traps and the oxide charge density. It considers the conversion between the two species of traps with energy levels E-1 and E-2, relative to the intrinsic Fermi level (E-i). These modifications directly affect the surface recombination velocity and hence the effective LT. The changes in the effective lifetime and the surface barrier as a result of UV irradiation as simulated by the model was found to be in good agreement with experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)08802-7].

引用

页码：994 / 1001

页数：8

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