MOCVD of vertically stacked CdSe/ZnSSe quantum islands

被引：18

作者：

Pohl, UW ^{[1
]}

Engelhardt, R ^{[1
]}

Türck, V ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

关键词：

CdSe/ZnSSe; quantum dots; MOCVD;

D O I：

10.1016/S0022-0248(98)00709-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Stacks of nominally one monolayer thick CdSe sheets, separated by ZnSSe barriers, were grown by metallorganic chemical vapor deposition. Cadmium interdiffusion and interface roughening was minimized at a VI/II ratio close to stoichiometry. CdSe quantum islands formed in the stacked sheets show a strong electronic coupling for barrier thicknesses below 50 Angstrom. The excitonic luminescence of coupled islands is red-shifted with respect to the emission of uncoupled islands. Evidence for rather weak vertical, structural correlation of island coupling is found. Plastic relaxation of larger stacks can be suppressed by strain-compensating barriers. Such stacked CdSe/ZnSSe structures are particularly interesting for lateral excitonic waveguide structures. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：569 / 573

页数：5

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