Gate-controlled electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

被引:35
作者
Nitta, J
Lin, YP
Akazaki, T
Koga, T
机构
[1] Japan Sci & Technol Agcy, CREST, NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Japan Sci & Technol Agcy, PRESTO, NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
D O I
10.1063/1.1631082
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electron g factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure is studied by measuring the angle dependence of magnetotransport properties. The gate voltage dependence of the g factor is obtained from the coincidence method. The g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and close to the bare g-factor value of In0.53Ga0.47As. A large change in the g factor is observed by applying the gate voltage. The gate voltage dependence is not simply explained by the energy dependence of the g factor. (C) 2003 American Institute of Physics.
引用
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页码:4565 / 4567
页数:3
相关论文
共 15 条
[1]   IMPROVED INALAS/INGAAS HEMT CHARACTERISTICS BY INSERTING AN INAS LAYER INTO THE INGAAS CHANNEL [J].
AKAZAKI, T ;
ARAI, K ;
ENOKI, T ;
ISHII, Y .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (06) :325-327
[2]   Highly confined two-dimensional electron gas in an In0.52Al0.48As/In0.53Ga0.47As modulation-doped structure with a strained InAs quantum well [J].
Akazaki, T ;
Nitta, J ;
Takayanagi, H ;
Enoki, T ;
Arai, K .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (04) :745-748
[3]   InAs-AlSb quantum wells in tilted magnetic fields [J].
Brosig, S ;
Ensslin, K ;
Jansen, AG ;
Nguyen, C ;
Brar, B ;
Thomas, M ;
Kroemer, H .
PHYSICAL REVIEW B, 2000, 61 (19) :13045-13049
[4]   SHUBNIKOV-DE HAAS OSCILLATIONS UNDER TILTED MAGNETIC-FIELDS IN INAS-GASB SUPER-LATTICES [J].
CHANG, LL ;
MENDEZ, EE ;
KAWAI, NJ ;
ESAKI, L .
SURFACE SCIENCE, 1982, 113 (1-3) :306-312
[5]   EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J].
FANG, FF ;
STILES, PJ .
PHYSICAL REVIEW, 1968, 174 (03) :823-&
[6]  
HRIVNAK L, 1999, PHYS STATUS SOLIDI A, V123, P133
[7]   Electronic g factor in biased quantum wells [J].
Ivchenko, EL ;
Kiselev, AA ;
Willander, M .
SOLID STATE COMMUNICATIONS, 1997, 102 (05) :375-378
[8]   Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures -: art. no. 041307 [J].
Jiang, HW ;
Yablonovitch, E .
PHYSICAL REVIEW B, 2001, 64 (04)
[9]   Electron g factor in one- and zero-dimensional semiconductor nanostructures [J].
Kiselev, AA ;
Ivchenko, EL ;
Rössler, U .
PHYSICAL REVIEW B, 1998, 58 (24) :16353-16359
[10]   Electron g factor engineering in III-V semiconductors for quantum communications [J].
Kosaka, H ;
Kiselev, AA ;
Baron, FA ;
Kim, KW ;
Yablonovitch, E .
ELECTRONICS LETTERS, 2001, 37 (07) :464-465