Broadband semiconductor saturable absorber mirror at 1.55μm using Burstein-Moss shifted Ga0.47In0.53As/InP distributed Bragg reflector

被引：24

作者：

Xiang, N ^{[1
]}

Okhotnikov, O ^{[1
]}

Vainionpää, A ^{[1
]}

Guina, M ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 06期

关键词：

D O I：

10.1049/el:20010275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the first broadband semiconductor saturable absorber mirror (SESAM) that consists of a Burstein-Moss blue-shifted Ga0.47In0.53As/InP distributed Bragg reflector operating at the wavelengths centred around 1.55 mum. This device is applied to the passive modelocking of an erbium-doped fibre laser.

引用

页码：374 / 375

页数：2

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