High power top-surface emitting oxide confined vertical-cavity laser diodes

被引：27

作者：

Grabherr, M

Weigl, B

Reiner, G

Michalzik, R

Miller, M

Ebeling, KJ

机构：

[1] University of Ulm, Department of Optoelectronics

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

vertical cavity surface emitting lasers;

D O I：

10.1049/el:19961155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large area MBE grown vertical-cavity surface emitting laser diodes (VCSELs) for high power emission at similar to 980nm wavelength have been fabricated. Top emitting devices of 146 mu m active diameter deliver 160mW at 20% wallplug efficiency and 180mW maximum output power in a junction-up configuration.

引用

收藏

页码：1723 / 1724

页数：2

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