Design of wide-band CMOS VCO for multiband wireless LAN applications

被引:136
作者
Fong, NHW [1 ]
Plouchart, JO
Zamdmer, N
Liu, DX
Wagner, LF
Plett, C
Tarr, NG
机构
[1] Cognio Canada Inc, Ottawa, ON K2K 3G3, Canada
[2] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[4] IBM Microelect Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA
[5] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
accumulation MOS (AMOS) varactor; bandswitching; CMOS; flicker noise; phase noise; radio frequency (RF); single-loop inductor; silicon-on-insulator (SOI); voltage-controlled oscillator (VCO); wide band;
D O I
10.1109/JSSC.2003.814440
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a general design, methodology of low-voltage wide-band voltage-controlled oscillator (VCO) suitable for wireless, LAN (WLAN) application is described. The applications of high-quality passives for the resonator are. introduced: 1) a single-loop horseshoe inductor with Q > 20 between 2 and 5 GHz [1] for good phase noise performance; and 2) accumulation MOS (AMOS), varactors with C-max/C-min ratio of ning capability At low-voltage supply. 6 [2] to provide wide-band tuning capability at low voltage supply. adverse effect of AMOS varactors due to high sensitivity is A examined. Amendment using bandswitching topology is suggested, and a phase noise improvement of 7 dB is measured to prove. the concept. The measured VCO, operates on a 1-V supply with a wide tuning range of 58.7 % between 3.0 and 5.6 GHz when tuned between +/-0.7 V. The phase noise is -120 dBc/Hz at 3.0 GHz, And -114.5 dBc/Hz at 5.6 GHz, with the nominal power dissipation between 2 and 3 mW Across the whole tuning range. The best 124 dBc/Hz at the frequency, of phase noise at 1-MHz offset is 3 GHz, a supply voltage of 1.4 V, and,power dissipation of 8.4 mW. When the supply is reduced to 0.83 V, the VCO dissipates less than 1 mW at 5.6 GHz. Using this design methodology, the A feasibility of generating two local oscillator frequencies (2.4-GHZ ISM and 5-GHz U-NII) for WLAN tranceiver using a single VCO with only one monolithic inductor is demonstrated. The VCO is fabricated in a 0.13-mum, partially depleted, silicon-on-insulator CMOS process.
引用
收藏
页码:1333 / 1342
页数:10
相关论文
共 20 条
[1]  
AINSPAN H, 2000, P EUR SOL STAT CIRC
[2]  
Fong N, 2002, 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, P158, DOI 10.1109/SOI.2002.1044458
[3]   A low-voltage multi-GHz VCO with 58% tuning range in SOICMOS [J].
Fong, N ;
Plouchart, JO ;
Zamdmer, N ;
Liu, D ;
Wagner, L ;
Plett, C ;
Tarr, G .
PROCEEDINGS OF THE IEEE 2002 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2002, :423-426
[4]   A 40 GHz VCO with 9 to 15% tuning range in 0.13μm SOICMOS [J].
Fong, N ;
Plouchart, JO ;
Zamdmer, N ;
Liu, DX ;
Wagner, L ;
Plett, C ;
Tarr, G .
2002 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2002, :186-189
[5]   A IV 3.8-5.7 GHz differentially-tuned VCO in SOICMOS [J].
Fong, N ;
Plouchart, JO ;
Zamdmer, N ;
Liu, D ;
Wagner, L ;
Plett, C ;
Tarr, G .
2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, :75-78
[6]   Design issues in CMOS differential LC oscillators [J].
Hajimiri, A ;
Lee, TH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (05) :717-724
[7]   A packaged 1.1-GHz CMOS VCO with phase noise of-126 dBc/Hz at a 600-kHz offset [J].
Hung, CM ;
O, KK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (01) :100-103
[8]  
*IE3D EL SIM OPT, BAY TECHN
[9]  
KUCERA J, 2001, IEEE INT SOL STAT CI, P374
[10]   Monolithic transformers for silicon RF IC design [J].
Long, JR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (09) :1368-1382