Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors

被引：35

作者：

Jang, M ^{[1
]}

Oh, J

Maeng, S

Cho, W

Lee, S

Kang, K

Park, K

机构：

[1] ETRI, Semicond & Basic Res Lab, Taejon 305350, South Korea

[2] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea

[3] Univ Seoul, Dept Nano Sci & Technol, Seoul 130743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1614441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current-voltage characteristics of erbium-silicided n-type Schottky barrier tunnel transistors (SBTTs) are discussed. The n-type SBTTs with 60 nm gate lengths shows typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about 10(5) at low drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current, respectively. This phenomenon is explained by using drain induced Schottky barrier thickness thinning effect. (C) 2003 American Institute of Physics.

引用

页码：2611 / 2613

页数：3

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