Atomic scale defects involved in NBTI

被引：3

作者：

Campbell, JP ^{[1
]}

Lenahan, PM ^{[1
]}

Krishnan, AT ^{[1
]}

Krishnan, S ^{[1
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

来源：

2004 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT | 2004年

关键词：

D O I：

10.1109/IRWS.2004.1422752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P-b0 centers. Si/SiO2 interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.

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收藏

页码：118 / 120

页数：3

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