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Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

被引：11
作者：
Duclère, JR
Guilloux-Viry, M
Bouquet, V
Perrin, A
Cattan, E
Soyer, C
Rèmiens, D
机构：
[1] Univ Rennes 1, CNRS, UMR 6511, Inst Chim Rennes,Lab Chim Solide & Inorgan Mol, F-35042 Rennes, France
[2] Univ Valenciennes & Hainaut Cambresis, Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520,Dept OAE,MIMM, F-59600 Maubeuge, France
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 26期
关键词：
D O I：
10.1063/1.1634387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on Pt(111) bottom electrode epitaxially grown by dc sputtering on sapphire(0001). Four-circle x-ray diffraction reveals the epitaxial growth of the SrBi2Nb2O9(115)/Pt(111) bilayers. The influence of the Pt bottom electrode on the growth of SrBi2Nb2O9 films is discussed in terms of atomic matching at the SrBi2Nb2O9/Pt interface. The remanent polarization is close to 6 muC/cm(2), with a coercive field of 140 kV/cm. The zero-field relative permittivity is about 132 and the dielectric loss less than to 2%. The decay in remanent polarization is only 16% after 2.10(9) switching cycles, confirming the fatigue resistance of the film. (C) 2003 American Institute of Physics.
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收藏
页码：5500 / 5502
页数：3
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