Detection of low energy single ion impacts in micron scale transistors at room temperature

被引：28

作者：

Batra, A.

Weis, C. D.

Reijonen, J.

Persaud, A.

Schenkel, T. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Accelerator & Fus Res, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Mol Foundry, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2805634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, microscale transistors by electron beam assisted etching. Device currents increase due to the generation of positively charged defects in gate oxides when ions (Sb-121(12+,14+) and Xe6+; 50-70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for the development of single atom devices and studies of dopant fluctuation effects.

引用

页数：3

共 23 条

[1] Single atom scale lithography for single electron devices [J].