Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation

被引：15

作者：

Hayashi, Y

Soga, T

Umeno, M

Jimbo, T

机构：

[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 304卷 / 1-4期

关键词：

GaN; electron irradiation; photo luminescence; UV luminescence; yellow luminescence; light-induced ESR;

D O I：

10.1016/S0921-4526(01)00499-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The yellow luminescence band in high-energy 7 MeV electron-irradiated n-GaN is investigated as a function of electron irradiation dose. Both the yellow-band intensity and the near-bandedge photoluminescence (PL) intensity decrease continually with increasing electron irradiation dose. The decrease rate for the yellow-band intensity is less compared to the near-bandedge intensity; however, it is found that the ratio of the yellow-band intensity to the near-bandedge PL intensity increases with increasing electron irradiation dose. To interpret this phenomenon. a theoretical model is developed for the yellow-to-near-bandedge intensity ratio based on rate equations. The proposed model is in good agreement with the experimental observation. The electron spin resonance (ESR) and light-induced ESR (LESR) spectra are measured to investigate deep defects induced by electron irradiation. The ESR signal intensity at g = 1.9451 decreases with increasing electron irradiation dose and increases with the light-induced time. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：12 / 17

页数：6

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