Physical compact modeling and analysis of velocity overshoot in extremely scaled CMOS devices and circuits

被引：46

作者：

Ge, LX ^{[1
]}

Fossum, JG

Liu, B

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Texas Instruments Inc, Tucson, AZ 85706 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期

关键词：

ballistic transport; compact model; scaled -channel metal-oxide-semiconductor field-effect transistors; (nMOSFETs); velocity overshoot;

D O I：

10.1109/16.944198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact physics-based velocity-overshoot model is developed, implemented in metal oxide semiconductor field-effect transistor (MOSFET) circuit models, verified based on measured current-voltage data and Monte Carlo-simulation results, and demonstrated in performance projections for 25 mn bulk-Si complementary metal-oxide-semiconductor (CMOS). The demonstration, involving predicted current-voltage characteristics and ring-oscillator propagation delays, reveals a significant benefit of velocity overshoot, or quasi-ballistic transport, in extremely scaled nMOS and even pMOS devices, although the on-state currents are well below the ballistic limits. Physical insight afforded by the model reveals why the ballistic limits are not being reached in scaled bulk-Si CMOS technologies.

引用

页码：2074 / 2080

页数：7

共 23 条

[1] High-field transport of inversion-layer electrons and holes including velocity overshoot [J].

Assaderaghi, F ;

Sinitsky, D ;

Bokor, J ;

Ko, PK ;

Gaw, H ;

Hu, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (04) :664-671

[2] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON [J].

BACCARANI, G ;

WORDEMAN, MR .

SOLID-STATE ELECTRONICS, 1985, 28 (04) :407-416

[3] Simplified energy-balance model for pragmatic multi-dimensional device simulation [J].

Chang, DH ;

Fossum, JG .

SOLID-STATE ELECTRONICS, 1997, 41 (11) :1795-1802

[4]

Ghani T., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P415, DOI 10.1109/IEDM.1999.824182

[5] EFFICIENT AND ACCURATE USE OF THE ENERGY-TRANSPORT METHOD IN DEVICE SIMULATION [J].

GOLDSMAN, N ;

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) :1524-1529

[6]

KIM K, 2000, SRC TECHCON 2000 PHO

[7]

LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[8] Elementary scattering theory of the Si MOSFET [J].

Lundstrom, M .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) :361-363

[9] THE INFLUENCE OF THE THERMAL-EQUILIBRIUM APPROXIMATION ON THE ACCURACY OF CLASSICAL TWO-DIMENSIONAL NUMERICAL MODELING OF SILICON SUBMICROMETER MOS-TRANSISTORS [J].

MEINERZHAGEN, B ;

ENGL, WL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :689-697

[10] ON THE FLOW EQUATION IN DEVICE SIMULATION [J].

PRICE, PJ .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4718-4722

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