C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design

Capacitance-voltage (C-V) characteristics are used to investigate double heterojunction strained Si/SiGe MOS capacitors. Structures of this type potentially form the channels of CMOS devices based on the strained Si/SiGe material system. The technique represents a fast and non-destructive method to determine important characteristics such as layer thicknesses, threshold voltages and band offsets. Moreover, it contributes to the design of optimum heterostructures for CMOS. Experimental C-V data are compared with simulation and complementary results including SIMS and TEM to confirm the accuracy of the technique.