Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors

被引：53

作者：

Dhananjay ^{[1
]}

Chu, Chih-Wei ^{[1
,2
]}

Ou, Chun-Wei ^{[3
]}

Wu, Meng-Chyi ^{[3
]}

Ho, Zhong-Yo ^{[4
]}

Ho, Kuo-Chuan ^{[4
]}

Lee, Shih-Wei ^{[5
]}

机构：

[1] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[3] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[4] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

[5] Axun Tek Solar Energy Co Ltd, Kaohsiung 821, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 23期

关键词：

D O I：

10.1063/1.2936275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11. (C) 2008 American Institute of Physics.

引用

页数：3

共 14 条

[1] Crystallization process and electro-optical properties of In2O3 and ITO thin films [J].