Electrical properties of metal/Si1-xGex/Si(100) heterojunctions

被引：17

作者：

Shinoda, H ^{[1
]}

Kosaka, M ^{[1
]}

Kojima, J ^{[1
]}

Ikeda, H ^{[1
]}

Zaima, S ^{[1
]}

Yasuda, Y ^{[1
]}

机构：

[1] NAGOYA UNIV, SCH ENGN, DEPT CRYSTALLINE MAT SCI, NAGOYA, AICHI 46401, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1996年 / 100卷

基金：

俄罗斯科学基金会;

关键词：

D O I：

10.1016/0169-4332(96)00333-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electrical properties of Zr/ and Ti/Si1-xGex/(100)Si heterostructures have been examined. The Schottky barrier heights (SBH's) of as-deposited diodes determined from I-V characteristics are 0.53 and 0.55 eV for Zr/ and Ti/n-Si0.8Ge0.2, respectively. It can be seen that p-Si0.8Ge0.2 diodes tend to have smaller SBH's than n-Si0.8Ge0.2 ones for both metals. This fact is consistent with the contact resistivity measured for Zr/n(+)- and Zr/p(+)-Si0.8Ge0.2/(100)Si.Zr/p(+)-Si0.8Ge0.2/(100)Si.

引用

页码：526 / 529

页数：4

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