Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's

被引：18

作者：

Canali, C

Pavan, P

DiCarlo, A

Lugli, P

Malik, R

Manfredi, M

Neviani, A

Vendrame, L

Zanoni, E

Zandler, G

机构：

[1] UNIV ROMA TOR VERGATA,DIPARTIMENTO INGN ELETTRON,INFM,I-00133 ROME,ITALY

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

[3] UNIV PARMA,DIPARTIMENTO FIS,I-43100 PARMA,ITALY

[4] UNIV PADUA,DIPARTIMENTO ELETTRON & INFORMAT,I-35131 PADUA,ITALY

[5] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85747 GARCHING,GERMANY

[6] TECH UNIV MUNICH,DEPT PHYS,D-85747 GARCHING,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 11期

关键词：

D O I：

10.1109/16.542420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed experimental and theoretical investigation of hot electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) operating at low current densities, Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission, A new general purpose weighted Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the device is demonstrated. Good agreement is found between theory and experiment.

引用

页码：1769 / 1777

页数：9

共 31 条

[21] MONTE-CARLO SIMULATION OF CHARGE TRANSPORT IN SEMICONDUCTOR-DEVICES [J].