Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN

被引：53

作者：

Lee, CT ^{[1
]}

Lin, YJ ^{[1
]}

Liu, DS ^{[1
]}

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli 320, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 16期

关键词：

D O I：

10.1063/1.1410358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using capacitance-voltage and photoluminescence measurements, we have investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type GaN with, and without, (NH4)(2)S-x treatment. The Schottky barrier height of 1.099 eV is very close to the Schottky limit of 1.10 eV for Au/Ni/n-type GaN treated with (NH4)(2)S-x. This result indicates that there is no severe Fermi level pinning induced by surface states. The reduction of the surface state density for the (NH4)(2)S-x-treated n-type GaN is attributed to the decrease of dangling bonds and occupation of nitrogen-related vacancies due to the formation of Ga-S bonds. (C) 2001 American Institute of Physics.

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页码：2573 / 2575

页数：3

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共 23 条

[1] Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Umeno, M .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :809-811

[2] Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy [J].

Bridger, PM ;

Bandic, ZZ ;

Piquette, EC ;

McGill, TC .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3522-3524

[3] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[4] SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY [J].

HACKE, P ;

DETCHPROHM, T ;

HIRAMATSU, K ;

SAWAKI, N .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2676-2678

[5] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[6] Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN [J].

Huh, C ;

Kim, SW ;

Kim, HM ;

Kim, DJ ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1942-1944

[7] AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor [J].

Khan, MA ;

Hu, X ;

Sumin, G ;

Lunev, A ;

Yang, J ;

Gaska, R ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (02) :63-65

[8] Long-term thermal stability of Ti/Al/Pt/Au Ohmic contacts to n-type GaN [J].

Lee, CT ;

Kao, HW .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2364-2366

[9] Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction [J].

Lee, CT ;

Yu, QX ;

Tang, BT ;

Lee, HY ;

Hwang, FT .

APPLIED PHYSICS LETTERS, 2001, 78 (22) :3412-3414

[10] Electronic structures of GaN edge dislocations [J].

Lee, SM ;

Belkhir, MA ;

Zhu, XY ;

Lee, YH ;

Hwang, YG ;

Frauenheim, T .

PHYSICAL REVIEW B, 2000, 61 (23) :16033-16039