Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor

被引：93

作者：

Sohn, Jung Inn ^{[1
]}

Choi, Su Seok ^{[2
]}

Morris, Stephen M. ^{[2
]}

Bendall, James S. ^{[1
]}

Coles, Harry J. ^{[2
]}

Hong, Woong-Ki ^{[1
,3
]}

Jo, Gunho ^{[3
]}

Lee, Takhee ^{[3
]}

Welland, Mark E. ^{[1
]}

机构：

[1] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England

[2] Univ Cambridge, Dept Engn, Ctr Mol Mat Photon & Elect, Cambridge CB3 0FA, England

[3] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

NANO LETTERS | 2010年 / 10卷 / 11期

关键词：

Semiconductor nanowires; nonvolatile memory; ferroelectric nanoparticles; FIELD-EFFECT TRANSISTORS; LOGIC-CIRCUITS; GATE DIELECTRICS; NANOELECTRONICS; HETEROSTRUCTURES; PERFORMANCE; SILICON;

D O I：

10.1021/nl1013713

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) EFT where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 x 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.

引用

页码：4316 / 4320

页数：5

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