Materials science - Nanowires in nanoelectronics

被引：109

作者：

Ferry, David K. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

SCIENCE | 2008年 / 319卷 / 5863期

关键词：

D O I：

10.1126/science.1154446

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：579 / 580

页数：2

共 14 条

[1] Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors [J].

Appenzeller, J ;

Knoch, J ;

Radosavljevic, M ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2004, 92 (22) :226802-1

[2] Atomic-scale nanowires: physical and electronic structure [J].

Bowler, DR .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (24) :R721-R754

[3] Vertical high-mobility wrap-gated InAs nanowire transistor [J].

Bryllert, T ;

Wernersson, LE ;

Fröberg, LE ;

Samuelson, L .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (05) :323-325

[4] Benchmarking nanotechnology for high-performance and low-power logic transistor applications [J].

Chau, R ;

Datta, S ;

Doczy, M ;

Doyle, B ;

Jin, J ;

Kavalieros, J ;

Majumdar, A ;

Metz, M ;

Radosavljevic, M .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (02) :153-158

[5] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[6] High performance fully-depleted tri-gate CMOS transistors [J].

Doyle, BS ;

Datta, S ;

Doczy, M ;

Hareland, S ;

Jin, B ;

Kavalieros, J ;

Linton, T ;

Murthy, A ;

Rios, R ;

Chau, R .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :263-265

[7] Ways towards the scaleable integration of carbon nanotubes into silicon based technology [J].

Duesberg, GS ;

Graham, AR ;

Kreupl, F ;

Liebau, M ;

Seidel, R ;

Unger, E ;

Hoenlein, W .

[8]

EVANS C, 1979, MICRO MILLENIUM

[9] Quo Vadis nanoelectronics? [J].

Ferry, D. K. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1, 2008, 5 (01) :17-22

[10]

FORESTER T, 1982, MICROELECTRONICS REV

← 1 2 →