GaInAsP microcylinder (microdisk) injection laser with AlInAs(Ox) claddings

被引：11

作者：

Fujita, M

Ushigome, R

Baba, T

Matsutani, A

Koyama, F

Iga, K

机构：

[1] Yokohama Natl Univ, Fac Elect & Comp Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

[2] Tokyo Inst Technol, Precis & Intelligence Lab, Microsyst Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 9A期

关键词：

AlInAs; GaInAsP; microcavity; microcylinder; microdisk; selective oxidation semiconductor laser;

D O I：

10.1143/JJAP.40.5338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose and demonstrate a 1.5-mum-GaInAsP/AIInAs microcylinder laser which improves the fragility of the microdisk. laser. The threshold current density was comparable to that reported for the 0.98-mum-GaInAs microcylinder laser. The selective oxidation of the AlInAs claddings; will further reduce the threshold by strong optical confinement in the disk like structure and will simplify the large-scale integration of this type of device.

引用

收藏

页码：5338 / 5339

页数：2

相关论文

共 13 条

[1] Lasing characteristics of GaInAsP-InP strained quantum-well microdisk injection lasers with diameter of 2-10 mu m [J].

Baba, T ;

Fujita, M ;

Sakai, A ;

Kihara, M ;

Watanabe, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (07) :878-880

[2] Photonic crystals and microdisk cavities based on GaInAsP-InP system [J].

Baba, T .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :808-830

[3] Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics, and spontaneous emission factor [J].

Fujita, M ;

Sakai, A ;

Baba, T .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :673-681

[4] Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40μA [J].

Fujita, M ;

Ushigome, R ;

Baba, T .

ELECTRONICS LETTERS, 2000, 36 (09) :790-791

[5] Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications [J].

Gebretsadik, H ;

Kamath, K ;

Zhou, WD ;

Bhattacharya, P ;

Caneau, C ;

Bhat, R .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :135-137

[6] High-performance 1.3-μm InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers [J].

Iwai, N ;

Mukaihara, T ;

Yamanaka, N ;

Kumada, K ;

Shimizu, H ;

Kasukawa, A .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :694-700

[7] ROOM-TEMPERATURE OPERATION OF MICRODISK LASERS WITH SUBMILLIAMP THRESHOLD CURRENT [J].

LEVI, AFJ ;

SLUSHER, RE ;

MCCALL, SL ;

TANBUNEK, T ;

COBLENTZ, DL ;

PEARTON, SJ .

ELECTRONICS LETTERS, 1992, 28 (11) :1010-1012

[8] ROOM-TEMPERATURE LASING ACTION IN IN0.51GA0.49P/IN0.2GA0.8AS MICROCYLINDER LASER-DIODES [J].

LEVI, AFJ ;

SLUSHER, RE ;

MCCALL, SL ;

PEARTON, SJ ;

HOBSON, WS .

APPLIED PHYSICS LETTERS, 1993, 62 (17) :2021-2023

[9] Vertical and smooth etching of InP by Cl2/Xe inductively coupled plasma [J].

Matsutani, A ;

Ohtsuki, H ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (7A) :4260-4261

[10] Superlattice AlAs/AlInAs-oxide current aperture for long wavelength InP-based vertical-cavity surface-emitting laser structure [J].

Ohnoki, N ;

Koyama, F ;

Iga, K .

APPLIED PHYSICS LETTERS, 1998, 73 (22) :3262-3264