A lumped transient thermal model for self-heating in MOSFETs

被引：20

作者：

Sabry, MN

Fikry, W

Salam, KA

Awad, MM

Nasser, AE

机构：

[1] Mentor Graph Egypt, Cairo, Egypt

[2] Mansoura Univ, Dept Mech Engn, Mansoura, Egypt

来源：

MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 10-11期

关键词：

MOSFET; thermal modeling; self-heating;

D O I：

10.1016/S0026-2692(01)00072-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Both static and dynamic effects related to self-heating in MOSFETs (metal-oxide-silicon field effect transistors) are studied in order to construct an adequate compact thermal model. An available 2D electrical device simulator in addition to a simple 2D finite difference code for the heat equation are used as analysis tools. These tools are used both to justify the proposed model topology as well as to extract model parameters. Both static and dynamic effects predicted by the model are compared with existing experimental results. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：847 / 853

页数：7

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