Conductance, surface traps, and passivation in doped silicon nanowires

被引：97

作者：

Fernandez-Serra, M. -V. ^{[1
]}

Adessi, Ch. ^{[1
]}

Blase, X. ^{[1
]}

机构：

[1] Univ Lyon 1, CNRS, Lab Phys Mattiere Condensee & Nanostruct, UMR 5586, F-69622 Villeurbanne, France

来源：

NANO LETTERS | 2006年 / 6卷 / 12期

关键词：

D O I：

10.1021/nl0614258

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We perform ab initio calculations within the Landauer formalism to study the influence of doping on the conductance of surface-passivated silicon nanowires. It is shown that impurities located in the core of the wire induce a strong resonant backscattering at the impurity bound state energies. Surface dangling bond defects have hardly any direct effect on conductance, but they strongly trap both p- and n-type impurities, as evidenced in the case of H-passivated wires and Si/SiO2 interfaces. Upon surface trapping, impurities become transparent to transport, as they are electrically inactive and do not induce any resonant backscattering.

引用

页码：2674 / 2678

页数：5

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