Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser

被引：3

作者：

Huffaker, DL

Oh, TH

Deppe, DG

机构：

[1] Microelectronics Research Center, Dept. of Elec. and Comp. Engineering, University of Texas at Austin, Austin

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 06期

关键词：

laser resonators; semiconductor lasers; surface-emitting lasers; total device effects;

D O I：

10.1109/68.584967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on vertical-cavity surface-emitting lasers (VCSEL's) that use high-index half-wave GaAs spacer layers and electronic tunnel injection and confinement. To our knowledge, this is the first demonstration of tunnel injection in a vertical-cavity laser, Threshold currents range from 344 mu A for a 6.5-mu m diameter device to 151 mu A for a 1-mu m diameter device, The relatively high threshold currents are attributed to a detuned cavity and higher order transverse-mode operation.

引用

页码：716 / 718

页数：3

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