A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor

被引：37

作者：

Liu, WC ^{[1
]}

Lin, KW

Chen, HI

Wang, CK

Cheng, CC

Cheng, SY

Lu, CT

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[3] Oriental Inst Technol, Dept Elect Engn, Taipei Hsien 22064, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 11期

关键词：

adsorption; barrier height variation; desorption; hydrogen sensitivity; transient response;

D O I：

10.1109/LED.2002.805006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new and interesting Pt/oxide/In0.49Ga0.51P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity of 561% is obtained when a 9090 ppm H-2/air gas is introduced. In addition, an absorption response time less than 1 s under the applied voltage of 0.7 V and 9090 ppm, H-2/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.

引用

页码：640 / 642

页数：3

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